AGR18125E TRIQUINT [TriQuint Semiconductor], AGR18125E Datasheet - Page 2

• Manufacturer Part Number: AGR18125E
• Description: 125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
* Across full DCS band, 1.805 GHz—1.880 GHz.
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Drain-to-gate Capacitance
Drain-to-source Capacitance
Power Gain
Drain Efficiency
EDGE Linearity Characterization
Output Power
Input VSWR
Ruggedness
(V
(V
(V
(V
(P
(V
(V
VSWR = 10:1 [all angles])
Modulation spectrum @ ± 400 kHz
Modulation spectrum @ ± 600 kHz
DS
DS
DS
DS
OUT
DS
DS
= 26 V, V
= 26 V, V
= 26 V, P
= 26 V, P
= 26 V, 1 dB gain compression, I
= 26 V, P
= 50 W, f = 1.840 GHz, V
GS
GS
OUT
OUT
OUT
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 125 W, I
= 125 W, I
= 30 W, I
Functional Tests* (in Agere Systems Supplied Test Fixture)
DS
DS
GS
Parameter
Parameter
DQ
= 10 V, I
= 26 V, I
DS
= 10 V, I
DQ
DQ
GS
= 1200 mA,
= 10 V, I
DS
= 1200 mA)
= 1200 mA)
GS
= 5 V, V
= 26 V, I
D
D
D
= 0, I
DQ
= 400 µA)
= 1200 mA)
= 1 A)
D
= 1200 mA)
= 1 A)
DS
Dynamic Characteristics
D
DS
(in Supplied Test Fixture)
DQ
= 200 µA)
= 0 V)
Off Characteristics
On Characteristics
= 26 V, V
400
= 1200 mA)
GS
= 0 V)
Symbol
V
Symbol
VSWR
C
V
V
V
C
P1dB
C
(BR)DSS
DS(ON)
GS(TH)
I
I
G
= 30 °C.
GS(Q)
G
GSS
OSS
DSS
RSS
ψ
η
FS
L
I
No degradation in output
power.
Min
Min
—
—
—
—
—
—
—
—
65
—
—
—
—
—
—
13.5
Typ
–60
–72
125
0.08
3.0
Typ
48
50
3.8
—
—
—
—
—
9
Max
Max
200
2:1
—
—
—
—
—
4.8
—
—
12
—
—
—
—
4
µAdc
µAdc
Unit
dBc
dBc
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
dB
W
%
S