AGR18125E TRIQUINT [TriQuint Semiconductor], AGR18125E Datasheet - Page 4

• Manufacturer Part Number: AGR18125E
• Description: 125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics
Z
0
= 6 Ω
MHz (f)
865 (f1)
880 (f2)
895 (f3)
INPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
(Complex Source Impedance)
f3
Z
S
0.980 – j2.93
0.865 – j2.90
0.710 – j2.81
f3
f1
Z
Z
GATE (2)
S
Z
L
f1
S
Ω
DUT
DRAIN (1)
SOURCE (3)
-90
(Complex Optimum Load Impedance)
Z
L
OUTPUT MATCH
2.54 + j0.868
2.58 + j0.819
2.60 + j0.765
Z
L
Ω