IRF3709Z IRF [International Rectifier], IRF3709Z Datasheet - Page 4

• Manufacturer Part Number: IRF3709Z
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]

1000.00
100.00
4
10.00
10000
1000
1.00
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
C oss
C iss
C rss
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
10000
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 17A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
1
V DS = 24V
V DS = 15V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10
15
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1msec
10msec
100µsec
100
20
1000
25