GLS37VF020-70-3C-NHE Greenliant, GLS37VF020-70-3C-NHE Datasheet

no-image

GLS37VF020-70-3C-NHE

Manufacturer Part Number
GLS37VF020-70-3C-NHE
Description
Manufacturer
Greenliant
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GLS37VF020-70-3C-NHE
Manufacturer:
Greenliant
Quantity:
90
FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• 2.7-3.6V Read Operation
• Superior Reliability
• Low Power Consumption:
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The GLS37VF010/020/040 devices are 128K x8 / 256K x8
/ 512K x8 CMOS, Many-Time Programmable (MTP), low
cost flash, manufactured with high performance Super-
Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturabil-
ity
GLS37VF010/020/040 can be electrically erased and pro-
grammed at least 1000 times using an external program-
mer, e.g., to change the contents of devices in inventory.
The GLS37VF010/020/040 have to be erased prior to pro-
gramming. These devices conform to JEDEC standard
pinouts for byte-wide flash memories.
Featuring
GLS37VF010/020/040 provide a typical Byte-Program
time of 15 µs. Designed, manufactured, and tested for a
wide spectrum of applications, these devices are offered
with an endurance of at least 1000 cycles. Data retention is
rated at greater than 100 years.
The GLS37VF010/020/040 are suited for applications that
require infrequent writes and low power nonvolatile stor-
age. These devices will improve flexibility, efficiency, and
performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
©2010 Greenliant Systems, Ltd.
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
– Active Current: 10 mA (typical)
– Standby Current: 2 µA (typical)
– 70 ns
compared
high
GLS37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories
GLS37VF010 / GLS37VF020 / GLS37VF040
Many-Time Programmable Flash
with
performance
1 Mbit / 2 Mbit / 4 Mbitsn(x8)
alternate
Byte-Program,
approaches.
www.greenliant.com
The
the
• Fast Byte-Program Operation:
• Electrical Erase Using Programmer
• CMOS I/O Compatibility
• JEDEC Standard Byte-wide Flash
• Packages Available
To meet surface mount and conventional through hole
requirements, the GLS37VF010/020/040 are offered in 32-
lead PLCC, 32-lead TSOP, and 32-pin PDIP packages.
See Figures 2, 3, and 4 for pin assignments.
Device Operation
The GLS37VF010/020/040 devices are nonvolatile mem-
ory solutions that can be used instead of standard flash
devices if in-system programmability is not required. It is
functionally (Read) and pin compatible with industry stan-
dard flash products.The device supports electrical Erase
operation via an external programmer.
Read
The Read operation of the GLS37VF010/020/040 is con-
trolled by CE# and OE#. Both CE# and OE# have to be
low for the system to obtain data from the outputs. Once
the address is stable, the address access time is equal to
the delay from CE# to output (T
output after a delay of TOE from the falling edge of OE#,
assuming the CE# pin has been low and the addresses
have been stable for at least T
high, the chip is deselected and a standby current of only 2
µA (typical) is consumed. OE# is the output control and is
– Byte-Program Time: 15 µs (typical)
– Chip Program Time:
– Does not require UV source
– Chip-Erase Time: 100 ms (typical)
EEPROM Pinouts
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
– Non-Pb (lead-free) packages available
2 seconds (typical) for GLS37VF010
4 seconds (typical) for GLS37VF020
8 seconds (typical) for GLS37VF040
CE
CE
-T
). Data is available at the
OE.
When the CE# pin is
S71151-11-000
Data Sheet
05/10

Related parts for GLS37VF020-70-3C-NHE

Related keywords