HS1B-0508RH-Q INTERSIL [Intersil Corporation], HS1B-0508RH-Q Datasheet
HS1B-0508RH-Q
Manufacturer Part Number
HS1B-0508RH-Q
Description
Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS1B-0508RH-Q.pdf
(6 pages)
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Radiation Hardened Single 8/Differential
4-Channel CMOS Analog Multiplexers
These radiation hardened monolithic CMOS multiplexers
each include an array of eight analog switches, a digital
decode circuit for channel selection, a voltage reference for
logic thresholds, and an ENABLE input for device selection
when several multiplexers are present.
The Dielectric Isolation (DI) process used in fabrication of
these devices eliminates the problem of latch-up. Also, DI
offers much lower substrate leakage and parasitic
capacitance than conventional junction-isolated CMOS.
Switches are guaranteed to break-before-make, so that two
channels are never shorted together. The switching
threshold for each digital input is established by an internal
+5V reference, providing a guaranteed minimum 2.4V for
logic “1” and maximum 0.8 for logic “0”. This allows direct
interface without pull-up resistors to signals from most logic
families: CMOS, TTL, DTL and some PMOS. For protection
against transient overvoltage, the digital inputs include a
series 200 resistor and a diode clamp to each supply. The
HS-0508RH is an eight channel single-ended multiplexer,
and the HS-0509RH is a four channel differential version. If
input overvoltage protection is needed, the HS-0548RH and
HS-0549RH multiplexers are recommended.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95692. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Pinouts
-VSUPPLY
ENABLE
HS-0508RH GDIP1-T16 (CERDIP)
OUT
IN 1
IN 2
IN 3
IN 4
A0
OR CDIP2-T16 (SBDIP)
1
2
3
4
5
6
7
8
TOP VIEW
1
Data Sheet
16
15
14
13
12
11
10
9
A1
A2
GND
+VSUPPLY
IN 5
IN 6
IN 7
IN 8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• Electrically Screened to SMD # 5962-95692
• QML Qualified per MIL-PRF-38535 Requirements
• Gamma Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 10
• No Latch-Up
• No Channel Interaction During Overvoltage
• Low On Resistance . . . . . . . . . . . . . . . . . . . . <200 (Typ)
• 44V Maximum Power Supply
• Break-Before-Make Switch
• Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . .
• Access Time. . . . . . . . . . . . . . . . . . . . . . . . . <300ns (Typ)
Applications
• Data Acquisition Systems
• Control Systems
• Telemetry
Ordering Information
5962D9569201VEA
5962D9569201VEC
5962D9569202VEA
5962D9569202VEC
ORDERING NUMBER
August 1999
-VSUPPLY
ENABLE
HS-0508RH, HS-0509RH
HS-0509RH GDIP1-T16 (CERDIP)
OUTA
IN 1A
IN 2A
IN 3A
IN 4A
A0
OR CDIP2-T16 (SBDIP)
1
2
3
4
5
6
7
8
HS1-0508RH-Q
HS1B-0508RH-Q
HS1-0509RH-Q
HS1B-0509RH-Q
TOP VIEW
MKT. NUMBER
INTERNAL
|
Copyright
File Number 3977.2
16
15
14
13
12
11
10
9
©
A1
GND
+VSUPPLY
IN 1B
IN 2B
IN 3B
IN 4B
OUT B
Intersil Corporation 1999
TEMP. RANGE
-55 to 125
-55 to 125
-55 to 125
-55 to 125
(
4
o
RAD(Si)
C)
15V
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HS1B-0508RH-Q Summary of contents
Page 1
... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 HS-0508RH, HS-0509RH August 1999 File Number 3977.2 INTERNAL TEMP. RANGE MKT. NUMBER HS1-0508RH-Q -55 to 125 HS1B-0508RH-Q -55 to 125 HS1-0509RH-Q -55 to 125 HS1B-0509RH-Q -55 to 125 HS-0509RH GDIP1-T16 (CERDIP) OR CDIP2-T16 (SBDIP) TOP VIEW A0 ...
Page 2
Functional Diagrams HS-0508RH IN1 IN2 DECODER/ DRIVER IN8 LEVEL 5V REF SHIFT † † †DIGITAL INPUT PROTECTION A0 A1 HS-0508RH TRUTH TABLE ...
Page 3
Schematic Diagrams OVERVOLTAGE PROTECTION ADD IN. 200 D1 V- FIGURE 1. ADDRESS INPUT BUFFER AND LEVEL SHIFTER ...
Page 4
Burn-In/Life Test Circuits HS-0508RH DYNAMIC BURN-IN AND LIFE TEST CIRCUIT V1 = -15V maximum, -16V minimum V2 = ...
Page 5
Irradiation Circuits 5 HS-0508RH, HS-0509RH HS-0509RH + -15V +15V 10k 5% HS-0508RH + ...
Page 6
Die Characteristics DIE DIMENSIONS: 81.9mils x 90.2mils x 19mils INTERFACE MATERIALS: Glassivation: Type: Nitride Å Å Thickness: 7k 0.7k Top Metallization: Type: Al Å Å Thickness: 16k 2k Substrate: CMOS Dielectric Isolation Metallization Mask Layout HS-0508RH ...