K4H560438E-GC SAMSUNG [Samsung semiconductor], K4H560438E-GC Datasheet - Page 14

• Manufacturer Part Number: K4H560438E-GC
• Description: 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM 256Mb E-die (x4, x8)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.3 April, 2005
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Specification
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V