K4H560438E-GC SAMSUNG [Samsung semiconductor], K4H560438E-GC Datasheet - Page 23
K4H560438E-GC
Manufacturer Part Number
K4H560438E-GC
Description
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H560438E-GC.pdf
(24 pages)
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DDR SDRAM 256Mb E-die (x4, x8)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
90
80
70
60
50
40
30
20
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
0
0.0
0.0
Pulldown Characteristics for Weak Output Driver
Pullup Characteristics for Weak Output Driver
1.0
1.0
2.0
2.0
Vout(V)
Vout(V)
Rev. 1.3 April, 2005
Typical High
Maximum
Typical Low
Minumum
Typical Low
Typical High
Maximum
Minimum
DDR SDRAM