K4H560438E-GC SAMSUNG [Samsung semiconductor], K4H560438E-GC Datasheet - Page 16

• Manufacturer Part Number: K4H560438E-GC
• Description: 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM 256Mb E-die (x4, x8)
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Parameter
Symbol
tWPST
tPDEX
tXSNR
tXSRD
tDIPW
tMRD
tREFI
tQHS
tRAP
tDAL
tIPW
tQH
tDS
tDH
tHP
(tWR/tCK)
or tCHmin
(tRP/tCK)
tCLmin
(DDR333@CL=2.5))
-tQHS
Min
0.45
0.45
1.75
200
tHP
2.2
0.4
12
75
18
+
6
B3
Max
0.55
7.8
0.6
-
-
(tWR/tCK)
or tCHmin
(tRP/tCK)
tCLmin
-tQHS
(DDR266@CL=2.0)
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
A2
Max
0.75
7.8
0.6
-
-
(tWR/tCK)
or tCHmin
(tRP/tCK)
tCLmin
(DDR266@CL=2.5))
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
Rev. 1.3 April, 2005
B0
DDR SDRAM
Max
0.75
7.8
0.6
-
-
Unit
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
10, 11
Note
j, k
j, k
11
11
13
8
8
4
2