K9F1208D0A SAMSUNG [Samsung semiconductor], K9F1208D0A Datasheet - Page 14

• Manufacturer Part Number: K9F1208D0A
• Description: 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208D0A
K9F1208U0A
PROGRAM / ERASE CHARACTERISTICS
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Program Time
Dummy Busy Time for Multi Plane Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
Symbol
K9F1216D0A
K9F1216U0A
Parameter
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALH
ALS
WP
WC
WH
CS
CH
DS
DH
K9F12XXD0A
25
10
10
10
20
10
50
15
0
0
0
(1)
Spare Array
Main Array
Min
K9F12XXU0A
25
10
10
10
20
10
50
15
0
0
0
(1)
Symbol
t
t
t
K9F12XXD0A
PROG
Nop
DBSY
BERS
14
-
-
-
-
-
-
-
-
-
-
-
Max
Min
K9F12XXU0A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
200
1
2
Unit
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
FLASH MEMORY
Max
500
10
1
2
3
cycles
cycle
Unit
ms
s
s