K9F1208D0A SAMSUNG [Samsung semiconductor], K9F1208D0A Datasheet - Page 46

• Manufacturer Part Number: K9F1208D0A
• Description: 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208D0A
K9F1208U0A
Data Protection & Power-up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.8V(2.65V device), 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
cuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for program/erase provides
additional software protection.
Figure 24. AC Waveforms for Power Transition
WP
WE
V
CC
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
K9F1216D0A
K9F1216U0A
IL
during power-up and power-down. A recovery time of minimum 10 s is required before internal cir-
10 s
High
46
FLASH MEMORY
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V