K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 2

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
K9F1G08U0A
128M x 8 Bit /256M x 8 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
GENERAL DESCRIPTION
Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 200µs on the 2112-byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V
device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0A′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : 2K-Byte
- Random Read : 25µs(Max.)
- Serial Access : 30ns(Min.) - 3.3v device
-1.8V device(K9F1G08R0A): 1.65V~1.95V
-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
K9F1G08U0A-Y,P
K9F1G08U0A-V,F
K9K2G08U1A-I
K9F1G08R0A
Part Number
50ns(Min.) -1.8v device
K9K2G08U1A
1.65 ~ 1.95V
2.7 ~ 3.6V
Vcc Range
2
• Fast Write Cycle Time
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Register Operation
• Cache Program Operation for High Performance Program
• Intelligent Copy-Back Operation
• Unique ID for Copyright Protection
• Package :
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F1G08U0A-YCB0/YIB0
- K9F1G08U0A-VIB0
- K9F1G08U0A-PCB0/PIB0
- K9F1G08U0A-FIB0
- K9K2G08U1A-ICB0/IIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
52-ULGA (12X17X0.65mm)
* K9F1G08U0A-V,F(WSOPI ) is the same device as
K9F1G08U0A-Y,P(TSOP1) except package type.
Organization
X8
FLASH MEMORY
Only available in MCP
PKG Type
52-ULGA
WSOP1
TSOP1