HYS64V2200GU-10 SIEMENS [Siemens Semiconductor Group], HYS64V2200GU-10 Datasheet - Page 6
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HYS64V2200GU-10
Manufacturer Part Number
HYS64V2200GU-10
Description
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.HYS64V2200GU-10.pdf
(17 pages)
DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Capacitance
T
Parameter
Input capacitance
Input capacitance
Input capacitance (
Input capacitance
Input capacitance
Input / Output capacitance
(DQ0-DQ63,CB0-CB7)
Input Capacitance (SCL,SA0-2)
Input/Output Capacitance
Semiconductor Group
(A0 to A10, BA, RAS, CAS, WE)
A
A
= 0 to 70 C;
= 0 to 70 C;
V
IN
< 3.6 V, all other inputs = 0 V)
V
V
SS
DD
(CS0 -CS3 )
(CKE0, CKE1)
(DQMB0 - DQMB7)
CLK0 - CLK3
I
= 0 V;
= 3.3 V
OUT
I
OUT
V
OUT
= 2.0 mA)
= – 2.0 mA)
V
DD,
V
0.3 V, f = 1 MHz
V
)
CC
DDQ
)
= 3.3 V
0.3 V
Symbol
C
C
C
C
C
C
C
C
I1
I2
ICL
I3
I4
IO
sc
sd
6
HYS64(72)V2200/4220GU-8/-10
2Mx64
Symbol
V
V
V
V
I
I
max.
I(L)
O(L)
45
20
22
22
13
13
10
IH
IL
OH
OL
8
2Mx72
max.
Limit Values
55
25
38
38
13
12
10
8
– 0.5
min.
– 40
– 40
2.0
2.4
Limit Values
–
4Mx64
SDRAM-Modules
max.
80
30
22
50
20
20
10
8
Vcc+0.3
max.
0.8
0.4
40
40
4Mx72
–
max.
90
35
38
55
20
20
10
8
Unit
V
V
V
V
Unit
pF
pF
pF
pF
pF
pF
pF
pF
A
A