M366S6453CTS-L1H/C1H SAMSUNG [Samsung semiconductor], M366S6453CTS-L1H/C1H Datasheet - Page 4

• Manufacturer Part Number: M366S6453CTS-L1H/C1H
• Description: PC133/PC100 Unbuffered DIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

M366S6453CTS
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
C
C
IN
C
C
T
C
DQM
ADD
CKE
OUT
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
-10
3.0
2.0
2.4
D
REF
OUT
-
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
200 mV)
= 0 to 70 C)
Typ
3.3
3.0
PC133/PC100 Unbuffered DIMM
0
-
-
-
Min
80
80
50
40
25
15
10
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
16
50
Max
100
100
60
45
35
20
15
REV. 0.0 Sept. 2001
Unit
uA
V
V
V
V
V
I
OH
I
OL
Unit
mA
W
V
V
Unit
Note
C
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3