K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 3

• Manufacturer Part Number: K9F4G08U0A
• Description: FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1A
K9F4G08U0A
GENERAL DESCRIPTION
PRODUCT LIST
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0A′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
FEATURES
- 2.70V ~ 3.60V
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
K9F4G08U0A-P
K9F4G08U0A-I
K9K8G08U1A-I
Part Number
2.70 ~ 3.60V
Vcc Range
3
• Fast Write Cycle Time
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
ECC)
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U1A-ICB0/IIB0
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- Program/Erase Lockout During Power Transitions
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
- Data Retention : 10 Years
- K9F4G08U0A-ICB0/IIB0
- K9F4G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
Organization
X8
FLASH MEMORY
Preliminary
PKG Type
52ULGA
TSOP1