K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 43
![no-image](/images/no-image-200.jpg)
K9F4G08U0A
Manufacturer Part Number
K9F4G08U0A
Description
FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F4G08U0A.pdf
(43 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K9F4G08U0A-PCB0
Manufacturer:
SAMSUNG
Quantity:
13 275
Company:
Part Number:
K9F4G08U0A-PCBO
Manufacturer:
SAMSUNG
Quantity:
4 000
Company:
Part Number:
K9F4G08U0A-PIB
Manufacturer:
ZARLINK
Quantity:
1 001
Company:
Part Number:
K9F4G08U0A-PIB0
Manufacturer:
FREESCALE
Quantity:
340
Company:
Part Number:
K9F4G08U0A-PIB0
Manufacturer:
SAMSUNG
Quantity:
4 000
K9K8G08U1A
K9F4G08U0A
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down. A recovery time of minimum 100µs is required before internal circuit gets ready for any command
sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.
Figure 21. AC Waveforms for Power Transition
WP
WE
V
CC
3.3V device : ~ 2.5V
100µs
High
43
FLASH MEMORY
3.3V device : ~ 2.5V
Preliminary
IL