PDM41256LA10T ETC [List of Unclassifed Manufacturers], PDM41256LA10T Datasheet - Page 7

• Manufacturer Part Number: PDM41256LA10T
• Description: 256K Static RAM 32K x 8-Bit
• Manufacturer: ETC [List of Unclassifed Manufacturers]

Low V
Data Retention Electrical Characteristics (LA Version Only)
NOTES: (For three previous Electrical Characteristics tables)
Rev. 2.0 - 7/17/96
Symbol Parameter
I
CCDR
t
V
t
CDR
R
DR
(4)
CC
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, t
4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage
6. Vcc = 5V ± 5%.
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
Data Retention Waveform
for Retention Data
HZCE
CE
V
or
IN
0.2V
V
V
is less than t
CC
CC
Test Conditions
– 0.2V
– 0.2V
LZCE
.
V
V
CC
CC
= 2V
= 3V
Min.
t
—
—
RC
2
0
Typ.
350
95
—
—
—
PDM41256
Max.
500
750
—
—
—
Unit
µA
µA
ns
ns
3-39
V
10
11
12
1
2
3
4
5
6
7
8
9