HX6408-EFM HONEYWELL [Honeywell Solid State Electronics Center], HX6408-EFM Datasheet - Page 7

• Manufacturer Part Number: HX6408-EFM
• Description: 512k x 8 STATIC RAM
• Manufacturer: HONEYWELL [Honeywell Solid State Electronics Center]

HX6408
Advanced Information
ASYCHRONOUS READ CYCLE AC TIMING CHARACTERISTICS (1)
7
Symbol
TAVAVR
TAVQV
TAXQX
TSLQV
TSLQX
TSHQZ
TPHQV
TPHQX
TPLQZ
TGLQV
TGLQX
TGHQZ
(1) Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in
(2) Typical operating conditions: VDD=3.3V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=3.0V to 3.6V, TA=-55°C to 125°C, post total dose 25°C at
www.honeywell.com
the Tester AC Timing Characteristics table, capacitive output loading C
TSHQZ, TPLQZ TGHQZ. For C
ADDRESS
NCS
DATA OUT
NSL
NOE
Parameter
Address Change to Output Invalid Time
Chip Select Access Time
Chip Select Output Enable Time
Chip Select Output Disable Time
Sleep Enable Access Time
Sleep Enable Output Enable Time
Sleep Enable Output Disable Time
Output Enable Access Time
Output Enable Output Enable Time
Output Enable Output Disable Time
Address Access Time
Address Read Cycle Time
IMPEDANCE
HIGH
T
L
PHQV
>50 pF, derate access times by 0.02 ns/pF (typical).
T
T
PHQX
T
T
GLQX
AVQV
SLQX
T
T
T
AVAVR
GLQV
SLQV
DATA VALID
300KRad
300KRad
300KRad
1MRad
1MRad
1MRad
T
AXQX
L
Typical
≥50 pF, or equivalent capacitive output loading C
(2)
Worst Case (3)
Min
-55 to 125°C
20
25
3
4
5
0
T
T
PLQZ
SHQZ
T
GHQZ
Max
20
25
20
25
25
10
8
5
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
L
=5 pF for