HX6408-EFM HONEYWELL [Honeywell Solid State Electronics Center], HX6408-EFM Datasheet - Page 8

• Manufacturer Part Number: HX6408-EFM
• Description: 512k x 8 STATIC RAM
• Manufacturer: HONEYWELL [Honeywell Solid State Electronics Center]

HX6408
Advanced Information
ASYNCHRONOUS WRITE CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in
(2)
(3) Worst case operating conditions: VDD=3.0V to 3.6V, -55°C to 125°C, post total dose 25°C
(4) TAVAVW = TWLWH + TWHWL
(5) Guaranteed but not tested
8
Symbol
TAVAVW
TWLWH
TSLWH
TDVWH
TAVWH
TWHDX
TAVWL
TWHAX
TWLQZ
TWHQX
TWHWL
the Tester AC Timing Characteristics table, capacitive output loading ≥50 pF, or equivalent capacitive load 5 pF for TWLQZ.
Typical operating conditions: VDD=3.3V, TA=25°C, pre-radiation.
DATA OUT
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ADDRESS
NWE
DATA IN
NCS
NSL
Parameter
Write Cycle Time (4)
Write Enable Write Pulse Width
Chip Select to End of Write Time
Data Valid to End of Write Time
Address Valid to End of Write Time
Data Hold after End of Write Time
Address Valid Setup to Start of Write Time
Address Valid Hold after End of Write Time
Write Enable to Output Disable Time
Write Disable to Output Enable Time
Write Disable to Write Enable Pulse Width (5)
IMPEDANCE
T
WHWL
HIGH
T
AVWL
T
PHWH
T
WLQZ
T
T
SLWH
WLWH
T
AVWH
T
AVAVW
300KRad
300KRad
300KRad
300KRad
300KRad
DATA VALID
1MRad
1MRad
1MRad
1MRad
1MRad
T
DVWH
Typical
(2)
T
WHDX
T
T
WHAX
WHQX
Worst Case (3)
-55 to 125°C
Min
20
25
15
20
16
20
12
15
20
25
0
0
0
4
5
Max
7
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns