K4M511633C-RBF1H SAMSUNG [Samsung semiconductor], K4M511633C-RBF1H Datasheet - Page 10

• Manufacturer Part Number: K4M511633C-RBF1H
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4M511633C - R(B)N/G/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
Address
0
0
1
1
0
1
BA1
A12~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
0
1
0
1
Single Bit
BA1
Mode Select
Length
"0" Setting for
Burst
Normal MRS
Reserved
Reserved
Reserved
BA0 ~ BA1
Mode Select
Type
EMRS for Mobile SDRAM
BA0
A9
0
Normal MRS
Reserved
Reserved
A12 ~ A10/AP
Reserved Address
Mode
A6
0
0
0
0
1
1
1
1
A12~A10/AP
A8
0
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
0
1
0
1
0
1
0
1
RFU
A7
0
A9
A6
*1
0
0
1
1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
1
2
3
*2
A5
A8
Driver Strength
0
1
0
1
A4
0
A8
Test Mode
Driver Strength
BA1 BA0
A3
0
1
0
A7
10
Reserved
Reserved
Mode Select
Burst Type
Full
A7
1/2
0
Sequential
Interleave
A3
A6
0
Type
mal MRS
for Nor-
A6
Setting
DS
Mode
CAS Latency
A5
A2
0
0
0
0
1
1
1
1
A5
A2
A1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
A4
RFU
A4
A1
A0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Full Page Length x16 : 512Mb(1024)
*1
A3
Mobile SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
PASR
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
Full Page
A2
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
PASR
A1
March 2006
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0