K4M511633C-RBF1H SAMSUNG [Samsung semiconductor], K4M511633C-RBF1H Datasheet - Page 6

no-image

K4M511633C-RBF1H

Manufacturer Part Number
K4M511633C-RBF1H
Description
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4M511633C - R(B)N/G/L/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
870Ω
Parameter
VDDQ
1200Ω
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
(V
DD
= 2.7V ∼ 3.6V, T
6
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
2.4 / 0.4
Value
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Figure 2. AC Output Load Circuit
DDQ
DDQ
Z0=50Ω
Mobile SDRAM
Vtt=0.5 x VDDQ
50Ω
30pF
Unit
ns
V
V
V
March 2006

Related parts for K4M511633C-RBF1H