K4M511633C-RBF1H SAMSUNG [Samsung semiconductor], K4M511633C-RBF1H Datasheet - Page 5

• Manufacturer Part Number: K4M511633C-RBF1H
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4M511633C - R(B)N/G/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. It has +/-5 °C tolerance.
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : 45°C/70°C, In extended Temp : 45°C/85°C
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
RC
Burst length = 1
I
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
-G/F
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= ∞
= ∞
A
1/2 of Full Array
1/4 of Full Array
Internal TCSR
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
-N/L
CC
CC
Full Array
CC
CC
= 10ns
= 10ns
= ∞
= ∞
110
115
180
-75
45
500
450
425
*4
Version
Mobile SDRAM
-1H
110
180
800
1.0
1.0
15
30
20
95
5
8
8
85/70
800
700
625
110
180
-1L
95
March 2006
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
°C
Note
1
1
2
3