SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8497DB-T2-E1
• Description: P-Channel 30 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
J
= 25 °C, unless otherwise noted)
Symbol
V
I
This document is subject to change without notice.
Q
SM
I
t
t
t
SD
S
rr
a
b
rr
I
F
= - 1.5 A, dI/dt = 100 A/µs, T
I
S
Test Conditions
= - 1.5 A, V
T
C
= 25 °C
GS
= 0
J
= 25 °C
Min.
- 0.73
Typ.
21
13
7
8
Vishay Siliconix
www.vishay.com/doc?91000
Si8497DB
Max.
- 1.2
- 15
- 20
40
15
www.vishay.com
Unit
nC
ns
ns
A
V
3