SI8802DB-T2-E1 VISHAY [Vishay Siliconix], SI8802DB-T2-E1 Datasheet
SI8802DB-T2-E1
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SI8802DB-T2-E1 Summary of contents
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... Device Marking: 802 xxx = Date/Lot Traceability Code Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation ...
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... Si8802DB Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...
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... 200 100 1.4 1.2 1 0.8 0 This document is subject to change without notice. Si8802DB Vishay Siliconix = 25 ° 125 ° ° 0.3 0.6 0.9 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...
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... Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.7 0 250 μA D 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0 ...
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... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0.8 0.6 0.4 0.2 0.0 100 125 150 25 = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper This document is subject to change without notice. Si8802DB Vishay Siliconix 50 75 100 125 150 T - Ambient Temperature (°C) A Power Derating www.vishay.com 5 ...
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... Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper) www ...
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... This document is subject to change without notice. Si8802DB Vishay Siliconix Inches Nom. Max. 0.0141 0.0157 0.0062 0.0074 0.0079 0.0084 0.0068 0.0072 0.0157 0.0078 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...