SI8901EDB_06 VISHAY [Vishay Siliconix], SI8901EDB_06 Datasheet - Page 2

• Manufacturer Part Number: SI8901EDB_06
• Description: Bi-Directional P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si8901EDB
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
D(on)
GS(th)
d(on)
d(off)
g
t
t
fs
r
f
I
SS
≅ −1 A, V
V
V
V
V
V
V
V
SS
GS
SS
GS
GS
Test Condition
SS
SS
= −5 V, V
= V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −10 V, I
= −10 V, R
GEN
GS
, I
= −4.5 V, R
D
GS
= −250 µA
SS
SS
SS
SS
L
= −4.5 V
= 10 Ω
= −1 A
= −1 A
= −1 A
= −1 A
G
= 6 Ω
Simulated
Data
0.046
0.060
0.075
0.49
6.2
2.1
42
2
2
7
Measured
S-60073Rev. B, 23-Jan-06
Data
0.048
0.062
0.081
Document Number: 72950
2.3
2.2
1.3
7
9
Unit
µs
V
A
Ω
S