FG694301 PANASONIC [Panasonic Semiconductor], FG694301 Datasheet
FG694301
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FG694301 Summary of contents
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... This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. Features Low drain-source ON resistance: R typ ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Electrical Characteristics T = 25°C±3°C a FET1 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) ...
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... 85° −1 25°C −30°C 10 −2 10 −3 0 0.5 1.0 1.5 2.0 Gate-source voltage V ( Ver. AED FG694301 R V DS(on) GS FG694301(FET1 DS(on 25° 0. 2.5 10 − Gate-source voltage V ( ...
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... T = 85°C a −1 25°C −10 −1 −30°C −10 −2 −10 −3 0 − 0.5 − 0.5 −1.0 −1.5 Gate-source voltage V GS −10 2 Ver. AED 10 3 FG694301(FET2)_ R DS(on) R V DS(on 25° − 0. −2.0 0 −2 −4 −6 (V) Gate-source voltage V ...
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... C iss 10 C oss 5 C rss 0 0 −5 −10 −15 −20 Drain-source voltage FG694301(FET2 Y 25° − −1 10 −2 10 −3 −10 −1 −1 −10 −10 2 Drain current I (mA) D Ver. AED FG694301 5 ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 SSMini6-F3-B 1.60 ±0.05 0. (0.5) 1.00 ±0.05 (5°) 6 +0.05 − 0. (0.5) Ver. AED Unit: mm +0.05 0.13 − 0.02 ...
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Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...