ECH8 SANYO [Sanyo Semicon Device], ECH8 Datasheet - Page 2

• Manufacturer Part Number: ECH8
• Description: N-Channel IGBT Light-Controlling Flash Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Fig.1 Large Current R Load Switching Circuit
Note1. Gate Series Resistance R G ≥ 230 Ω is recommended for protection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Ordering Information
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TIG058E8-TL-H
4V
0V
200
180
160
140
120
100
80
60
40
20
0
0
if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, R G < 230 Ω can also be used.
Tc=25 ° C
R G
1
Device
Parameter
Collector-to-Emitter Voltage, V CE -- V
2
100kΩ
3
R L
I C -- V CE
4
TIG058E8
5
6
C M
I CES
V (BR)CES
I GES
Cies
Coes
Cres
V GE (off)
V CE (sat)
Symbol
7
Package
ECH8
+
8
I C =2mA, V GE =0V
V CE =320V, V GE =0V
V GE =±6V, V CE =0V
IT14281
V CE =10V, f=1MHz
9
V CE =10V, I C =1mA
I C =100A, V GE =4V
V CC
10
TIG058E8
Conditions
3,000pcs./reel
Shipping
200
180
160
140
120
100
80
60
40
20
0
0
V CE =10V
0.5
1.0
Gate-to-Emitter Voltage, V GE -- V
1.5
min
I C -- V GE
2.0
400
Pb Free and Halogen Free
0.4
2.5
Ratings
typ
memo
2200
3.0
4.0
32
24
3.5
max
4.0
±10
0.9
5.6
10
No. A1381-2/7
4.5
IT14282
Unit
μA
μA
pF
pF
pF
V
V
V
5.0