S593T_08 VISHAY [Vishay Siliconix], S593T_08 Datasheet

no-image

S593T_08

Manufacturer Part Number
S593T_08
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
MOSMIC
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Features
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Document Number 85047
Rev. 1.6, 08-Sep-08
• Integrated gate protection diodes
• Low noise figure
• High gain
• Biasing network on chip
• Improved cross modulation at gain reduction
• High AGC-range
• SMD package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
AGC
RF in
and WEEE 2002/96/EC
C block
C block
G1
G2
®
for TV-Tuner Prestage with 5 V Supply Voltage
Not for new design, this product will be obsoleted soon
S
D
C block
RFC
RF out
V
94 9296
DD
(V
DS
)
e3
S593T/S593TR/S593TRW
Mechanical Data
Typ: S593T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S593TR
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S593TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
3
2
4
1
4
1
1
4
2
3
2
3
Electrostatic sensitive device.
Observe precautions for handling.
SOT143R
SOT343R
SOT143
Vishay Semiconductors
www.vishay.com
19216
1

Related parts for S593T_08

S593T_08 Summary of contents

Page 1

Not for new design, this product will be obsoleted soon ® MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage Comments MOSMIC - MOS Monolithic Integrated Circuit Features • Integrated gate protection diodes • Low noise figure • High gain ...

Page 2

S593T/S593TR/S593TRW Vishay Semiconductors Parts Table Part S593T S593TR S593TRW Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage ...

Page 3

Electrical AC Characteristics °C, unless otherwise specified amb MHz DS G2S D DSP Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance ...

Page 4

S593T/S593TR/S593TRW Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 250 200 150 100 100 125 T – AmbientTemperature (° 10759 amb Figure 1. Total Power Dissipation vs. Ambient ...

Page 5

800 MHz 0 -20 -40 - Gate 2 Source V oltage ( 11167 G2S Figure 7. Transducer Gain vs. Gate 2 Source Voltage ...

Page 6

S593T/S593TR/S593TRW Vishay Semiconductors = 50 Ω mA j0.5 j2 j0.2 0 0.2 0 –j0.2 300 1300 MHz 1050 550 800 –j0.5 –j2 –j ...

Page 7

Package Dimensions 12239 Package Dimensions in mm 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 1.8 [0.071] 96 12240 Document Number 85047 Rev. 1.6, 08-Sep-08 S593T/S593TR/S593TRW 3 [0.118] 0.5 [0.020] 2.6 [0.102] 0.35 [0.014] 2.35 ...

Page 8

S593T/S593TR/S593TRW Vishay Semiconductors Package Dimensions 12238 www.vishay.com 8 Document Number 85047 Rev. 1.6, 08-Sep-08 ...

Page 9

Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems ...

Page 10

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

Related keywords