K7I161882B-FC16 SAMSUNG [Samsung semiconductor], K7I161882B-FC16 Datasheet - Page 12
![no-image](/images/no-image-200.jpg)
K7I161882B-FC16
Manufacturer Part Number
K7I161882B-FC16
Description
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K7I161882B-FC16.pdf
(17 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K7I161882B-FC16
Manufacturer:
SAMSUNG
Quantity:
11 770
Company:
Part Number:
K7I161882B-FC16000
Manufacturer:
SAMSUNG
Quantity:
11 775
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
K7I163682B
K7I161882B
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250Ω and V
APPLICATION INRORMATION
Junction to Ambient
Junction to Case
MEMORY
CONTROLLER
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
thermal impedance. T
2. Periodically sampled and not 100% tested.
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
Source CLK
Source CLK
Return CLK
Return CLK
Data Out
Address
PRMETER
PRMETER
Data In
BW
W
R
J
=T
A
Vt
+ P
R
R=50Ω Vt=V
D
x θ
JA
Vt
Vt
D
SA
REF
R W BW
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
IN
SRAM#1
SYMBOL
θ
θ
0
JA
JC
BW
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1
- 12 -
TESTCONDITION
C C
V
V
OUT
K
IN
CQ
Q
CQ
ZQ R=250Ω
=0V
-
K
=0V
TYP
17.1
3.3
TYP
D
SA
R
4
6
5
Vt
Vt
RW BW
MAX
5
7
6
SRAM#4
0
°C
°C
UNIT
BW
/W
/W
UNIT
pF
pF
pF
1
C C
July. 2004
CQ
K
NOTE
ZQ
CQ
NOTE
ZQ
Q
Rev 3.1
K
R=250Ω