K7I161882B-FC16 SAMSUNG [Samsung semiconductor], K7I161882B-FC16 Datasheet - Page 7
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K7I161882B-FC16
Manufacturer Part Number
K7I161882B-FC16
Description
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K7I161882B-FC16.pdf
(17 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K7I161882B-FC16
Manufacturer:
SAMSUNG
Quantity:
11 770
Company:
Part Number:
K7I161882B-FC16000
Manufacturer:
SAMSUNG
Quantity:
11 775
K7I163682B
K7I161882B
Notes: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
LINEAR BURST SEQUENCE TABLE
2. "LOAD" refers to read new address active status with LD=Low, "LOAD" refers to read new address inactive status with LD=High.
3. "READ" refers to read active read status with R/W=High, "WRITE" refers to write active status with R/W=Low
LOAD
BURST SEQUENCE
Second Address
First Address
LOAD
DDR READ
READ
STATE DIAGRAM
LOAD NEW ADDRESS
POWER-UP
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
NOP
- 7 -
LOAD
Case 1
LOAD
SA
0
1
0
WRITE
DDR WRITE
LOAD
Case 2
SA
1
0
LOAD
0
July. 2004
Rev 3.1