SI6544BDQ_08 VISHAY [Vishay Siliconix], SI6544BDQ_08 Datasheet

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SI6544BDQ_08

Manufacturer Part Number
SI6544BDQ_08
Description
N- and P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72244
S-81056-Rev. B, 12-May-08
Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
P-Channel
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
D
S
S
1
1
1
1
V
DS
- 30
30
1
2
3
4
(V)
TSSOP-8
Top View
0.073 at V
J
a
0.043 at V
0.046 at V
N- and P-Channel 30-V (D-S) MOSFET
0.032 at V
= 150 °C)
a
R
DS(on)
GS
GS
GS
GS
a
(Ω)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
8
7
6
5
Steady State
a
D
S
S
G
T
T
T
T
2
2
2
2
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
D
- 3.8
- 2.8
4.3
3.7
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
FEATURES
• Halogen-free
G
TrenchFET
1
10 s
1.14
0.73
4.3
3.5
1.0
N-Channel MOSFET
N-Channel
Typical
120
30
20
88
65
Steady State
D
S
®
1
1
Power MOSFETS
0.83
0.53
3.7
3.0
0.7
- 55 to 150
± 20
10 s
- 3.8
- 3.0
- 1.0
1.14
0.73
P-Channel
Maximum
G
Vishay Siliconix
2
- 30
- 20
110
150
80
Steady State
Si6544BDQ
P-Channel MOSFET
- 3.8
- 2.6
- 0.7
0.83
0.53
www.vishay.com
S
D
2
2
RoHS
COMPLIANT
°C/W
Unit
Unit
°C
W
V
A
1

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SI6544BDQ_08 Summary of contents

Page 1

N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY V ( DS(on) 0.032 N-Channel 30 0.046 0.043 P-Channel - 30 0.073 TSSOP ...

Page 2

Si6544BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b ...

Page 3

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.080 0.064 0.048 ...

Page 4

Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D ...

Page 5

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 6

Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.15 0.12 0. ...

Page 7

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 - ...

Page 8

Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 ...

Page 9

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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