SI6459BDQ-T1 VISHAY [Vishay Siliconix], SI6459BDQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6459BDQ-T1
• Description: P-Channel 60-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si6459BDQ
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
Single Pulse
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
I
D
0
= 250 mA
T
Threshold Voltage
J
− Temperature (_C)
10
25
−3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
−2
125
Safe Operating Area, Junction-to-Case
by r
Limited
Square Wave Pulse Duration (sec)
I
Limited
D(on)
V
150
DS(on)
DS
New Product
Single Pulse
T
− Drain-to-Source Voltage (V)
10
A
1
−1
= 25_C
BV
DSS
10
I
Limited
50
40
DM
1
30
20
10
0
10
Limited
−3
10
−2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
10
DM
JM
−1
Time (sec)
− T
t
1
A
= P
t
2
1
DM
Z
thJA
100
thJA
t
t
S-32220—Rev. A, 03-Nov-03
1
2
(t)
Document Number: 72518
10
= 100_C/W
100
600
600