SI6463BDQ_05 VISHAY [Vishay Siliconix], SI6463BDQ_05 Datasheet - Page 2

• Manufacturer Part Number: SI6463BDQ_05
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model
Si6463BDQ
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
I
DS
D
≅ −1 A, V
= −10 V, V
V
V
V
V
V
V
V
DS
GS
GS
GS
I
DS
DS
Test Condition
S
DD
= −1.3 A, V
= −5 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= V
= −15 V, I
= −10 V, R
GEN
GS
GS
, I
= −4.5 V, R
D
= −5 V, I
= − 250 µA
GS
D
D
D
D
GS
L
= −7.4 A
= −4.5 V
= −7.4 A
= −6.3 A
= −5.5 A
= 15 Ω
= 0 V
D
= −7.4 A
G
= 6 Ω
Simulated
Data
0.011
0.015
0.020
−0.79
0.71
250
126
5.2
35
31
33
33
46
8
Measured
S-52526Rev. B, 12-Dec-05
Data
0.011
0.015
0.020
−0.64
Document Number: 72137
190
5.2
34
40
35
40
90
8
Unit
nC
ns
V
A
Ω
S
V