HAT2215R-EL-E RENESAS [Renesas Technology Corp], HAT2215R-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2215R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2215R, HAT2215RJ
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 5. Pulse test
Rev.3.00 Dec. 22, 2004 page 2 of 7
Item
HAT2215R
HAT2215RJ
Symbol
V
V
V
R
R
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
I
I
|y
V
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
1.0
4.2
80
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
0.83
Typ
100
400
7.0
7.3
1.1
1.3
6.0
4.0
3.5
88
57
24
39
30
—
—
—
—
—
—
—
Max
1.08
115
145
2.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1MHz
V
V
I
V
V
R
R
IF = 3.4 A, V
IF =3.4 A, V
diF/ dt = 100 A/ s
D
G
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
GS
DD
L
g
= 10 mA, V
= 1.7 A, V
= 1.7 A, V
= 1.7 A, V
= 3.4 A
= 100 A, V
= 17.6
= 4.7
= 16 V, V
= 80 V, V
= 64 V, V
= 10 V, I
= 10 V
= 0
= 25 V
= 10 V
=10 V, I
30 V
Test Conditions
GS
D
GS
GS
DS
GS
D
GS
GS
GS
= 1.7 A
= 1 mA
= 0
DS
= 10 V
= 10 V
= 4.5 V
= 0
GS
= 0
= 0
= 0
(Ta = 25°C)
= 0
= 0
Note5
Note5
Note5
Note5