HAT2215R-EL-E RENESAS [Renesas Technology Corp], HAT2215R-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2215R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2215R, HAT2215RJ
Rev.3.00 Dec. 22, 2004 page 4 of 7
100
250
200
150
100
100
-25
50
20
10
50
80
60
40
20
0
Static Drain to Source on State Resistance
1
0
Pulse Test
V
10 V
I
D
DS
Reverse Drain Current
V
= 3.4 A
Dynamic Input Characteristics
0
GS
Case Temperature
Body-Drain Diode Reverse
2
Gate Charge
= 4.5 V
25
V
Recovery Time
vs. Temperature
DD
V
4
50
= 50 V
di / dt = 100 A / µs
V
DD
I
D
GS
3
25 V
10 V
= 0.5 A, 1 A, 2 A
= 50 V
0.5 A, 1 A, 2 A
75 100 125 150
= 0, Ta = 25°C
25 V
10 V
6
Qg (nC)
Tc
I
DR
8
(°C)
(A)
V
GS
10
10
20
16
12
8
4
0
0.03
0.01
100
0.3
0.1
1000
30
10
100
500
200
100
0.01
1
50
10
3
20
50
20
10
5
2
1
5
2
0.1
0
V
Rg = 4.7 Ω, duty ≤ 1 %
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
GS
Drain to Source Voltage V
0.03 0.1
0.2
= 10 V, V
= 0
10
75°C
Switching Characteristics
t f
Drain Current
Typical Capacitance vs.
Drain to Source Voltage
t r
Drain Current
Drain Current
t d(off)
0.5
Tc = –25°C
25°C
20
DD
0.3
= 30 V
1
t d(on)
30
I
V
Pulse Test
1
D
I
2
D
DS
(A)
(A)
= 10 V
40
3
DS
5
Coss
Ciss
Crss
(V)
10
50
10