HAT2215R-EL-E RENESAS [Renesas Technology Corp], HAT2215R-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2215R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2215R, HAT2215RJ
Rev.3.00 Dec. 22, 2004 page 6 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
10 µ
10 µ
1
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation)
D = 1
D = 1
0.5
100 µ
100 µ
1 m
1 m
10 m
10 m
Pulse Width PW (S)
Pulse Width PW (S)
100 m
100 m
1
1
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
P
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θch - f(t) = γs (t) x θch - f
θch - f = 210°C/W, Ta = 25°C
P
DM
DM
10
10
PW
T
PW
T
100
100
D =
1000
1000
D =
PW
PW
T
T
10000
10000