UPA1715G NEC [NEC], UPA1715G Datasheet

UPA1715G

Manufacturer Part Number

UPA1715G

Description

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

Manufacturer

NEC [NEC]

Datasheet

1.UPA1715G.pdf (8 pages)

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Quantity

Price

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H&T Electronics

Part Number:

UPA1715G

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H&T Electronics

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UPA1715G

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Company:

Bonase Electronics (HK) Co., Limited

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UPA1715G-E1/JM

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NEC

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30 000

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

computers and Li-ion battery protection circuit.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

G13669EJ1V0DS00 (1st edition)

March 1999 NS CP(K)

PA1715G

= 8.5 m

= 11.0 m

= 12.0 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 3800 pF TYP.

10 s, Duty Cycle

TYP. (V

Note1

= 25°C)

= 0 V)

= –10 V, I

= –4.5 V, I

= –4.0 V, I

P-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

Note2

1 %

= –6.0 A)

= 25°C, All terminals are connected.)

= –6.0 A)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

x 0.7 mm

–55 to +150

MOS FIELD EFFECT TRANSISTOR

–30

150

2.0

PACKAGE DRAWING (Unit : mm)

5.37 Max.

0.40

1.27

°C

+0.10

–0.05

0.78 Max.

0.12 M

EQUIVARENT CIRCUIT

1,2,3

5,6,7,8

Gate

Protection

Diode

0.5 ±0.2

6.0 ±0.3

; Source

; Gate

; Drain

PA1715

4.4

Source

Drain

0.8

1998, 1999

0.10

Body

Diode

Related parts for UPA1715G

UPA1715G Summary of contents

Page 1

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-resistance R = 8.5 m TYP – DS(on 11.0 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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UPA1715G NEC [NEC], UPA1715G Datasheet

UPA1715G

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UPA1715G Summary of contents

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