UPA1724G NEC [NEC], UPA1724G Datasheet
UPA1724G
Manufacturer Part Number
UPA1724G
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet
1.UPA1724G.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA1724G
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
UPA1724G-E2
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
Transistor designed for power management
applications of notebook computers and so on.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1724 is N-Channel MOS Field Effect
2.5-V gate drive and low on-resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
iss
PA1724G
G14048EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
= 11.0 m
= 12.0 m
= 15.0 m
: C
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
iss
= 1850 pF TYP.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
Note1
DS
A
GS
= 25°C)
= 0 V)
GS
GS
GS
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
1 %
A
D
D
D
The mark
= 25°C, All terminals are connected.)
= 5.0 A)
= 5.0 A)
= 5.0 A)
INDUSTRIAL USE
I
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
SWITCHING
2
–55 to +150
x 2.2 mm
shows major revised points.
MOS FIELD EFFECT TRANSISTOR
150
±12
±10
±40
2.0
20
8
1
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit : mm)
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1,2,3
4
5,6,7,8
0.5 ±0.2
6.0 ±0.3
PA1724
©
4.4
; Source
; Gate
; Drain
Source
Drain
Body
Diode
0.8
0.10
1999, 2000
Related parts for UPA1724G
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
The high-density rack server NEC Express5800/R120d-1E
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
The high-density rack server NEC Express5800/R120d-1M
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
The flexible compact rack server NEC Express5800/R120d-2E
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
The high-capacity rack server NEC Express5800/R120d-2E(Storage-Rich)
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
The scalable compact rack server NEC Express5800/R120d-2M
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
The flexible blade server NEC Express5800/B120d
Manufacturer:
NEC [NEC]
Datasheet:
Part Number:
Description:
16/8 bit single-chip microcomputer
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Dual audio power amp circuit
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Dual comparator
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
MOS type composite field effect transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
50 V/100 mA FET array incorporating 2 N-ch MOSFETs
Manufacturer:
NEC
Datasheet: