UPA1792G NEC [NEC], UPA1792G Datasheet

UPA1792G

Manufacturer Part Number

UPA1792G

Description

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

Manufacturer

NEC [NEC]

Datasheet

1.UPA1792G.pdf (12 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

Remark

DESCRIPTION

FEATURES

P-Channel

designed for Motor Drive application of HDD and so on.

Low on-resistance

N-Channel R

Low input capacitance

N-Channel C

P-Channel C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

The PA1792 is N- and P-Channel MOS Field Effect Transistors

PART NUMBER

G14557EJ1V0DS00 (1st edition)

July 2000 NS CP(K)

PA1792G

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DS(on)1

DS(on)2

DS(on)3

DS(on)1

DS(on)2

DS(on)3

iss

= 760 pF TYP.

= 900 pF TYP.

= 36 m MAX. (V

= 54 m MAX. (V

= 65 m MAX. (V

= 26 m

= 36 m

= 42 m

N- AND P-CHANNEL POWER MOS FET

MAX. (V

Power SOP8

PACKAGE

= –10 V, I

= –4.5 V, I

= –4.0 V, I

= 10 V, I

= 4.5 V, I

= 4.0 V, I

INDUSTRIAL USE

DATA SHEET

SWITCHING

= 3.4 A)

= –2.9 A)

= 3.4 A)

= –2.9 A)

MOS FIELD EFFECT TRANSISTOR

Gate

Protection

Diode

N-Channel

Source

PACKAGE DRAWING (Unit : mm)

Drain

5.37 MAX.

EQUIVALENT CIRCUIT

0.40

1.27

Body

Diode

+0.10

–0.05

0.78 MAX.

0.12 M

N-Channel

P-Channel

Gate

Protection

Diode

PA1792

0.5 ±0.2

6.0 ±0.3

4.4

P-Channel

7,8 ; Drain 1

5,6 ; Drain 2

Source

; Source 1

; Gate 1

; Source 2

; Gate 2

Drain

1999, 2000

0.8

Body

Diode

0.10

Related parts for UPA1792G

UPA1792G Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES Low on-resistance N-Channel MAX. (V DS(on ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-CHANNEL CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 4

P-CHANNEL CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 5

TYPICAL CHARACTERISTICS ( N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING ...

Page 6

A) N-Channel FORWARD TRANSFER CHARACTERISTICS 100 10 T =125˚C A 75˚C 1 25˚C 25˚C 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 25˚C A 25˚C 10 ...

Page 7

A) N-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 4 100 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...

Page 8

B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ...

Page 9

B) P-Channel FORWARD TRANSFER CHARACTERISTICS 100 10 T =150˚ 75˚C 0.1 25˚C 25˚C 0.01 0.001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 25˚C A ...

Page 10

B) P-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 4 4 100 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO ...

Page 11

Data Sheet G14557EJ1V0DS00 PA1792 11 ...

Page 12

The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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