UPA1803GR-9JG NEC [NEC], UPA1803GR-9JG Datasheet

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UPA1803GR-9JG

Manufacturer Part Number
UPA1803GR-9JG
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Manufacturer
NEC [NEC]
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
directly by a 4.5
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
This product is a switching device which can be driven
The PA1803 features a low on-state resistance and
Can be driven by a 4.5-V power source
Low on-state resistance
R
R
Built-in G-S protection diode against ESD
DS(on)1
DS(on)2
PART NUMBER
PA1803GR-9JG
2. Mounted on ceramic substrate of 5000 mm
D13803EJ1V0DS00 (1st edition)
April 1999 NS CP(K)
= 12 m
= 16 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
-
V power source.
10 s, Duty Cycle
MAX. (V
MAX. (V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
GS
GS
= 10 V, I
= 4.5 V, I
Power TSSOP8
PACKAGE
1 %
D
D
= 4.0 A)
The mark
A
= 4.0 A)
= 25°C)
I
FOR SWITCHING
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
shows major revised points.
2
–55 to +150
x 1.1 mm
±8.0
MOS FIELD EFFECT TRANSISTOR
150
±20
±32
2.0
30
8
1
3.15 ±0.15
3.0 ±0.1
0.27
0.65
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit : mm)
+0.03
–0.08
5
4
0.8 MAX.
0.10 M
1, 5, 8
2, 3, 6, 7: Source
4
: Drain
: Gate
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
©
1.2 MAX.
6.4 ±0.2
4.4 ±0.1
PA1803
1.0±0.05
0.1±0.05
3
Source
+5
–3
Drain
Body
Diode
1998,1999
0.5
0.6
1.0 ±0.2
0.25
0.1
+0.15
–0.1

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UPA1803GR-9JG Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION This product is a switching device which can be driven directly by a 4.5 V power source. - The PA1803 features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 0.01 0 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 I ...

Page 5

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 0.1 0.01 0.8 1.0 0.4 0 Source to Drain Voltage - V F(S-D) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Mounted on ceramic 2 ...

Page 6

Data Sheet D13803EJ1V0DS00 PA1803 ...

Page 7

Data Sheet D13803EJ1V0DS00 PA1803 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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