K6R1004C1A SAMSUNG [Samsung semiconductor], K6R1004C1A Datasheet - Page 4

• Manufacturer Part Number: K6R1004C1A
• Description: 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC CHARACTERISTICS
READ CYCLE
K6R1004C1A-C
TEST CONDITIONS
Output Loads(A)
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Parameter
D
255
OUT
Parameter
(T
A
=0 to 70 C, V
+5.0V
480
30pF*
* Including Scope and Jig Capacitance
Symbol
t
t
t
t
t
t
t
OHZ
t
t
t
t
OLZ
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
CC
=5.0V 10%, unless otherwise noted.)
K6R1004C1A-12
Min
12
- 4 -
3
0
0
0
3
0
-
-
-
-
Output Loads(B)
for t
HZ
Max
12
12
12
, t
6
6
6
-
-
-
-
-
LZ
, t
WHZ
K6R1004C1A-15
, t
Min
15
3
0
0
0
3
0
-
-
-
-
OW
D
255
OUT
, t
OLZ
See below
0V to 3V
& t
Value
Max
1.5V
15
15
15
3ns
7
7
7
-
-
-
-
-
OHZ
CMOS SRAM
K6R1004C1A-20
Min
20
3
0
0
0
3
0
-
-
-
-
PRELIMINARY
+5.0V
480
5pF*
February 1998
Max
20
20
20
9
9
9
-
-
-
-
-
Rev 4.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns