K6R1004C1A SAMSUNG [Samsung semiconductor], K6R1004C1A Datasheet - Page 5

• Manufacturer Part Number: K6R1004C1A
• Description: 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
• Manufacturer: SAMSUNG [Samsung semiconductor]

WRITE CYCLE
K6R1004C1A-C
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
Address
CS
OE
Data out
V
Current
CC
Parameter
I
I
SB
CC
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
WHZ
t
t
WP1
t
WC
CW
WR
DW
OW
AW
WP
AS
DH
t
PU
t
LZ(4,5)
(Address Controlled
(WE=V
t
K6R1004C1A-12
OLZ
t
OH
Min
50%
12
12
8
0
8
8
0
0
6
0
3
t
AA
IH
)
t
CO
- 5 -
t
OE
t
AA
Max
6
-
-
-
-
-
-
-
-
-
-
,
CS=OE=V
t
RC
t
RC
K6R1004C1A-15
Min
15
10
10
10
15
IL
0
0
0
7
0
3
, WE=V
Valid Data
IH
)
Max
7
-
-
-
-
-
-
-
-
-
-
Valid Data
K6R1004C1A-20
Min
20
12
12
12
20
CMOS SRAM
0
0
0
9
0
3
t
t
t
HZ(3,4,5)
OH
OHZ
50%
t
PD
PRELIMINARY
Max
February 1998
9
-
-
-
-
-
-
-
-
-
-
Rev 4.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns