UPA1911ATE NEC [NEC], UPA1911ATE Datasheet - Page 4

• Manufacturer Part Number: UPA1911ATE
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: NEC [NEC]

4
200
150
100
300
250
200
150
100
200
150
100
50
50
50
−0.01
−0.01
0
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
0.0
V
V
GS
GS
= −2.5 V
= −4.5 V
−2.0
V
−0.10
GATE TO SOURCE VOLTAGE
−0.10
GS
T
T
A
A
T
- Gate to Source Voltage - V
= +125°C
= −25°C
I
A
D
−4.0
= −25°C
I
D
DRAIN CURRENT
DRAIN CURRENT
- Drain Current - A
- Drain Current - A
T
A
= +125°C
−1.00
−1.00
T
−6.0
A
= +75°C
T
A
−8.0
T
= +25°C
A
−10.00
−10.00
= +75°C
T
A
= +25°C
−10.0 −12.0
I
D
= −1.5 A
−100.00
−100.00
Data Sheet G15044EJ1V0DS
1000
200
150
100
200
150
100
100
50
10
50
−0.01
0
0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
−0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
−50
V
I
D
GS
= −1.5 A
= −4.0 V
V
T
DS
−0.10
ch
T
CHANNEL TEMPERATURE
A
- Drain to Source Voltage - V
0
- Channel Temperature - °C
= −25°C
I
V
D
−1.0
GS
DRAIN CURRENT
- Drain Current - A
= −2.5 V
T
V
A
GS
= +125°C
−1.00
= −4.5 V
50
T
−10.0
A
T
= +25°C
A
−10.00
V
= +75°C
GS
µ µ µ µ PA1911A
100
= −4.0 V
C
C
C
f = 1MH
V
oss
rss
iss
GS
= 0V
−100.00
−150
Z
150