K6R1008C1D SAMSUNG [Samsung semiconductor], K6R1008C1D Datasheet

K6R1008C1D

Manufacturer Part Number

K6R1008C1D

Description

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Manufacturer

SAMSUNG [Samsung semiconductor]

Datasheet

1.K6R1008C1D.pdf (11 pages)

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K6R1016V1D

Document Title

Revision History

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Rev. No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 1.0

Rev. 2.0

Rev. 3.0

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

History

Initial document.

Speed bin modify

Current modify

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct read cycle timing diagram(2).

CC(Industrial)

Item

10ns

8ns

100mA

85mA

- 1 -

Current

90mA

75mA

May. 11. 2001

June. 18. 2001

September. 9. 2001

December. 18. 2001

February. 14. 2002

June. 19. 2002

Draft Data

CMOS SRAM

for AT&T

Preliminary

Final

Remark

Revision 3.0

June 2002

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