K6R1008C1D SAMSUNG [Samsung semiconductor], K6R1008C1D Datasheet - Page 11
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K6R1008C1D
Manufacturer Part Number
K6R1008C1D
Description
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K6R1008C1D.pdf
(11 pages)
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K6R1016V1D
PACKAGE DIMENSION
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
#A1
C1
B1
E1
E2
A
B
C
D
E
Y
5.90
6.90
0.40
0.80
0.30
Top View
Min
-
-
-
-
-
Side View
B
D
0.75
6.00
3.75
7.00
5.25
0.45
0.90
0.55
0.35
Typ
C
-
Max
6.10
7.10
0.50
1.00
0.40
0.08
-
-
-
-
- 11
A
B
C
D
E
F
G
H
6
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
4. Typ: Typical
5. Y is coplanarity: 0.08(Max)
otherwise specified.
5
Bottom View
4
B1
B
3
Detail A
A
2
B/2
1
CMOS SRAM
Y
for AT&T
Unit: millimeters
Revision 3.0
June 2002