FW216A SANYO [Sanyo Semicon Device], FW216A Datasheet - Page 2

• Manufacturer Part Number: FW216A
• Description: N-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0V
0
PW=10μs
D.C.≤1%
0
V IN
0.1
Parameter
0.2
Drain-to-Source Voltage, V DS -- V
V IN
G
50Ω
0.3
I D -- V DS
0.4
V DD =15V
D
0.5
S
I D =4.5A
R L =3.3Ω
0.6
FW216A
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
0.7
0.8
I D =1mA, V GS =0V
V DS =35V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =4.5A
I D =4.5A, V GS =10V
I D =2A, V GS =4.5V
I D =2A, V GS =4.0V
V DS =10V, f=1MHz
See specifi ed Test Circuit.
V DS =10V, V GS =10V, I D =4.5A
I S =4.5A, V GS =0V
0.9
IT16697
1.0
FW216A
Conditions
9
8
7
6
5
4
3
2
1
0
0
V DS =10V
0.5
1.0
Gate-to-Source Voltage, V GS -- V
1.5
min
I D -- V GS
2.0
1.5
35
2.5
Ratings
typ
0.85
280
3.0
100
2.6
5.6
1.2
0.8
49
80
60
30
21
20
10
6
3.5
max
±10
4.0
112
140
2.5
1.2
64
No. A0176-2/4
1
4.5
IT16698
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
5.0