K7R643682M_07 SAMSUNG [Samsung semiconductor], K7R643682M_07 Datasheet - Page 16
![no-image](/images/no-image-200.jpg)
K7R643682M_07
Manufacturer Part Number
K7R643682M_07
Description
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K7R643682M_07.pdf
(20 pages)
- Current page: 16 of 20
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TIMING WAVE FORMS OF READ, WRITE AND NOP
K7R643682M
K7R641882M
K7R640982M
K
K
SA
W
R
D (Data In)
Q (Data Out)
C
C
CQ
CQ
Note: 1. If address A2=A3, data Q3-1=D2-1, data Q3-2=D2-2.
2.BWx assumed active.
Write data is forwarded immediately as read results.
D2-1
A1
READ
D2-2
A2
WRITE
D4-1
A3
READ
D4-2
A4
2Mx36 & 4Mx18 & 8Mx9 QDR
WRITE
D6-1
A5
Q1-1
READ
- 16 -
D6-2
A6
Q1-2
WRITE
D7-1
Q3-1
NOP
D7-2
A7
Q3-2
WRITE
Rev. 1.3 March 2007
Q5-1
NOP
Don
TM
′
t Care
II b2 SRAM
Q5-2
Undefined
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