UPA622TT NEC [NEC], UPA622TT Datasheet

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UPA622TT

Manufacturer Part Number
UPA622TT
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Manufacturer
NEC [NEC]
Datasheet
1.UPA622TT.pdf (7 pages)
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
DESCRIPTION
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
ORDERING INFORMATION
Remark "-A" indicates Pb-free (This product does not contain Pb
Marking: WC
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. Mounted on FR-4 board of 5000 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
directly by a 4.0 V power source.
• 4.0 V drive available
• Low on-state resistance
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
This device features a low on-state resistance and excellent
The
R
R
R
DS(on)1
DS(on)2
DS(on)3
µ
2. PW ≤ 10
PA622TT is a switching device which can be driven
µ
µ
PART NUMBER
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PA622TT-E1-A
PA622TT-E2-A
= 82 mΩ MAX. (V
= 120 mΩ MAX. (V
= 139 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
Note1
s, Duty Cycle ≤ 1%
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note2
Note1
DS
GS
GS
= 0 V)
GS
GS
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
D
6 pin WSOF (1620)
The mark
= 1.5 A)
D
D
I
= 1.0 A)
= 1.0 A)
A
D(pulse)
V
V
I
PACKAGE
D(DC)
T
P
P
T
= 25°C)
FOR SWITCHING
GSS
DSS
DATA SHEET
stg
T1
T2
ch
2
x 1.1 mm, t ≤ 5 sec.
shows major revised points.
–55 to +150
MOS FIELD EFFECT TRANSISTOR
±3.0
±20
±12
150
0.2
1.3
30
°C
°C
W
W
V
V
A
A
0.65
PACKAGE DRAWING (Unit: mm)
6
1
2.0 ±0.2
0.2
EQUIVALENT CIRCUIT
µ
Gate
+0.1
−0.05
5
2
Gate
Protection
Diode
0.05
PA622TT
4
3
0.65
S
0.1
Source
Drain
M S
0.8 MAX.
1, 2, 5, 6: Drain
3
4
Body
Diode
0 to 0.05
: Gate
: Source
S
2002

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UPA622TT Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 100 R Limited ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12 Pulsed 4 0.2 0.4 0.6 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 Pulsed 150 T = 125°C A 100 75°C 25°C − 25° 0.01 0 Drain Current - A D DRAIN TO ...

Page 6

DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge ...

Page 7

The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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