CM400HU-24H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400HU-24H_09 Datasheet - Page 2

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CM400HU-24H_09

Manufacturer Part Number
CM400HU-24H_09
Description
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that the device junction temperature (T
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
V
t
Q
R
R
R
C
CM
E
EM (Note 2)
CES
GES
d (on)
r
d (off)
f
rr
Symbol
Symbol
stg
j
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 2)
th(j-c)Q
th(j-c)R
th(c-f)
G
rr (Note 2)
2. I
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (T
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
(Note 2)
(Note 2)
E
, I
EM
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
(Tj = 25
Item
Item
C
) measured point is shown in page OUTLINE DRAWING.
j
) should not increase beyond 150°C.
°
C, unless otherwise specified.)
(Note 5)
(Tj = 25
V
V
T
Pulse
T
Pulse
T
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
Auxiliary terminals M4 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
Resistive load
I
I
die / dt = –800A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to heat sink, conductive grease applied (Note 6)
E
E
C
C
C
C
C
GE
CE
CE
CE
GE
CC
CC
GE
G
= 400A, V
= 400A,
= 40mA, V
= 400A, V
GE
= 25°C
= 25°C
= 25°C
= 0.78Ω
°
= 0V
= V
= 0V
C, unless otherwise specified.)
= 10V
= 0V
= 600V, I
= 600V, I
= ±15V
= V
CES
GES
, V
GE
GE
CE
, V
C
C
GE
= 400A, V
= 400A
= 0V
= 15V
CE
= 10V
= 0V
= 0V
Test Conditions
Conditions
2
GE
= 15V
(Note 4)
j
) does not exceed T
T
T
j
j
= 25°C
= 125°C
(Note 1)
(Note 1)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min
4.5
rating.
CM400HU-24H
–40 ~ +150
–40 ~ +125
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
Ratings
Limits
1500
1200
2100
2500
2.85
0.02
±20
400
800
400
800
450
Typ
2.9
2.2
INSULATED TYPE
6
Max
0.06
0.09
250
350
350
350
300
7.5
0.5
3.7
3.2
60
21
12
2
Feb. 2009
Vrms
K/W
K/W
K/W
Unit
N·m
N·m
N·m
Unit
mA
µA
nC
µC
nF
nF
nF
°C
°C
ns
ns
ns
ns
ns
W
V
V
V
A
A
A
A
V
V
g

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