CM400HU-24H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400HU-24H_09 Datasheet - Page 3

• Manufacturer Part Number: CM400HU-24H_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
800
600
400
200
10
10
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
3
2
3
7
5
3
2
2
7
5
3
1.0
0
0
COLLECTOR-EMITTER SATURATION
T
T
V
V
j
j
GE
FORWARD CHARACTERISTICS
= 25°C
1
VOLTAGE CHARACTERISTICS
GE
= 25°C
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
(V)
= 15V
1.5
= 20
T
T
2
200
j
j
FREE-WHEEL DIODE
= 25°C
= 125°C
3
( TYPICAL )
( TYPICAL )
( TYPICAL )
2.0
4
400
15
5
2.5
6
7
600
3.0
C
8
12
11
10
( A )
9
8
9
CE
EC
800
3.5
10
( V )
( V )
3
800
600
400
200
10
10
10
10
0
9
8
7
6
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
5
3
2
7
5
3
2
7
5
3
2
7
5
2
1
0
0
0
3 5 7
COLLECTOR-EMITTER SATURATION
CAPACITANCE CHARACTERISTICS
V
V
GATE-EMITTER VOLTAGE V
T
GATE-EMITTER VOLTAGE V
GE
CE
TRANSFER CHARACTERISTICS
j
2
2
VOLTAGE CHARACTERISTICS
= 25°C
= 0V
= 10V
10
4
4
0
2
6
6
3 5 7
( TYPICAL )
( TYPICAL )
( TYPICAL )
HIGH POWER SWITCHING USE
8
8
MITSUBISHI IGBT MODULES
10
10
10
1
12 14 16 18
12 14 16 18
2
I
C
3 5 7
CM400HU-24H
C
T
T
C
= 800A
C
I
I
oes
j
j
C
C
res
ies
= 25°C
= 125°C
= 400A
= 160A
GE
GE
10
INSULATED TYPE
2
( V )
( V )
CE
2 3
20
20
( V )
Feb. 2009