CM400HU-24H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400HU-24H_09 Datasheet - Page 4

• Manufacturer Part Number: CM400HU-24H_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
I
Single Pulse
T
C
2 3 5 7
C
IMPEDANCE CHARACTERISTICS
Per unit base = R
= 400A
COLLECTOR CURRENT I
= 25°C
2
400
t
t
d(off)
d(on)
GATE CHARGE Q
TRANSIENT THERMAL
10
3
t
t
f
r
–2
HALF-BRIDGE
2 3 5 7
5 7
800
( TYPICAL )
( TYPICAL )
( IGBT part )
TIME ( s )
V
10
10
10
CC
2
–1
th(j – c)
–5
1200
= 400V
2 3 5 7
2 3 5 7
2
G
V
V
V
R
T
= 0.06K/W
CC
( nC )
CC
GE
j
G
10
3
10
= 125°C
1600
= 0.78Ω
–4
C
0
= 600V
= 600V
= ±15V
2 3 5 7
2 3 5 7
( A )
5 7
2000
10
10
10
10
10
10
3
3
2
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
–di/dt = 800A/µs
T
1
–3
Single Pulse
T
j
IMPEDANCE CHARACTERISTICS
2 3 5 7
C
= 25°C
Per unit base = R
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
10
3
–2
2 3 5 7
HIGH POWER SWITCHING USE
5 7
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
10
10
10
2
–1
th(j – c)
–5
2 3 5 7
2 3 5 7
CM400HU-24H
2
= 0.09K/W
10
10
3
E
INSULATED TYPE
( A )
0
–4
2 3 5 7
2 3 5 7
t
l
5 7
rr
rr
10
10
10
10
10
10
3
10
7
5
3
2
10
7
5
3
2
10
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
2
1
0
Feb. 2009